Dr.-Ing. Friedhard Römer
Dr.-Ing. Friedhard Römer
Arbeitsgebiet
- Numerische Simulation photonischer und elektronischer Komponenten
Lehre
- Übungen zu Felder und Wellen in optoelektronischen Bauelementen
- Hauptseminar über aktuelle Themen der Optoelektronik
- Workshop zur Arbeitstechnik
Laufende Arbeiten
- Simulation von Nanodraht-Phototransistoren
- Design von Halbleiterlasern für den ultravioletten Spektralbereich
2024
Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single-Quantum-Well Active Regions
In: physica status solidi (a) (2024)
ISSN: 1862-6300
DOI: 10.1002/pssa.202400067 , , , , , , , , , , , , :
Simulation Study of Aluminum Nitride TrenchFETs with Polarization-Induced Doping
In: physica status solidi (a) (2024)
ISSN: 1862-6300
DOI: 10.1002/pssa.202400045 , , :
Simulation of Carrier Injection Efficiency in AlGaN-based UV-light-emitting Diodes
In: IEEE Photonics Journal (2024), S. 1-8
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3430488 , , , , , , :
Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements
In: Applied Physics Letters 125 (2024), Art.Nr.: 071109
ISSN: 0003-6951
DOI: 10.1063/5.0223284 , , , , , , , , , :
Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts
In: Nanotechnology 35 (2024), Art.Nr.: 215206
ISSN: 0957-4484
DOI: 10.1088/1361-6528/ad2bd0 , , , , , , , :
Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
In: IEEE Photonics Journal 16 (2024), S. 1-5
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3379231 , , , , , , , , :
Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
In: IEEE Photonics Journal (2024), S. 1-6
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3351965 , , , , , , , :
2023
Effect of the Hole Mobility on the Emission Spectrum of a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023 (Turin, ITA, 18. September 2023 - 21. September 2023)
In: Paolo Bardella, Alberto Tibaldi (Hrsg.): Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023
DOI: 10.1109/NUSOD59562.2023.10273498 , , , , , , , :
Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study
Physics and Simulation of Optoelectronic Devices XXXI 2023 (San Francisco, CA, USA, 31. Januar 2023 - 2. Februar 2023)
In: Bernd Witzigmann, Marek Osinski, Yasuhiko Arakawa (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2023
DOI: 10.1117/12.2652797 , :
2022
Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
In: Frequenz (2022)
ISSN: 0016-1136
DOI: 10.1515/freq-2022-0078 , , , , , , , , , , , , , :
2021
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
In: Materials 14 (2021)
ISSN: 1996-1944
DOI: 10.3390/ma14247890 , , , , :
2017
Luminescence distribution in the multi-quantum well region of III-nitride light emitting diodes
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI 2017
DOI: 10.1117/12.2253668 , :
2014
Auger recombination and leakage in InGaN/GaN quantum well LEDs
Gallium Nitride Materials and Devices IX (San Francisco, CA)
DOI: 10.1117/12.2037043 , , , :
2013
Computational modelling of surface effects in InGaN/GaN quantum disk nano wire LEDs
Physics and Simulation of Optoelectronic Devices XXI (San Francisco, CA)
DOI: 10.1117/12.2006182 , :